28 31 35 42 56 70 105 140 v 40 45 50 60 80 100 150 200 v to-252/dpak e: to-252/dpak, molded plastic mo unting position: any polarity: see diagram erminals: plated leads solderable per 0.85 0.92 = 5a v cas sk520d-sk5200d 1 of 2 c/w pf 0.55 v 580d characteristic symbol c la ssification rating 94v-o plastic case material has ul flammability guard ring die construction for use in low voltage application low power loss, high efficiency ideally suited for automatic assembly 5.0 a sc hottky barrier diode feat ures m ec hanical data ! ! t mil- std- 202, method 208 ! ! ! lead free: for rohs / lead free version m aximum ra tings and electrical characteristics @t a =25 c unl ess otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. ! schottk y barrier chip ! ! ! ! ! peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rw m v r rms reverse voltage v r( rms) a verage rectified output current @t l = 75c (not e 1) i o 5. 0 a non-repeti tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fs m a forward vo ltage @i f fm p ea k reverse current @t a = 25c a t rated dc blocking voltage @t a = 100c i rm 0. 1 20 ma ty pical junction capacitance (note 2) c j ty pical thermal resistance (note 1) r ja operati ng and storage temperature range t j , t st g c not e: 1. valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. sk 540d sk 550d sk 560d 5100d 5150d units 0.70 350 280 200 15 z ibo seno electronic engineering co., ltd. www.senocn.com 5200d 150 sk 545d SK540D-sk5200d sk sk sk sk -55 to +150 -55 t o +125
2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com SK540Dp-sk5200d SK540D-sk5200d r at ing and characteristic curves fig.1-typical forw ard current derating curve average forw ard current ,(a) 1.0 2.0 3.0 4.0 5.0 6.0 case temperature,( c) 0 0 20 40 60 80 100 120 140 160 180 200 40v-45v fig.2-typical forw ard characteristics 0.1 1.0 .01 10 50 instant aneous forward current,(a) forward vol t age,(v) pulse width 300us 1% duty cycle .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 50~60v 80~100v 20~45v tj=25 c 150~200v fig.3-maximum non-repetitive forward surge current 60 30 0 90 150 120 number of cycles at 60hz 11 0 5 50 100 tj=25 c 8.3ms single half sine wave jedec method peak forw ard surge current,(a) fig.4 - typical reverse characteristics reverse leakage current, (ma) 0.001 0.01 0.1 1.0 100 10 0 percent of rated peak reverse vol t age,(%) 20 40 60 80 100 20v~45v 50v~200v t25c j = t 100 c j = 50-200v
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